Process Development Engineer

Job Description :

Being responsible for SRAM memory device development, you will join a small development team with talented and driven contributors to deliver high-density, production-worthy, reliable memory technology on schedule and within budget. You will work with development wafer fabrication facilities to manage device definition, creation, demonstration, and delivery and work with multiple design groups to capture requirements and to evaluate tradeoffs providing a unique opportunity to create SRAM memory solutions for TI customers. Highly visible position interacting with multiple business groups, development groups, and fabrication facilities. You will be involved in innovative pathfinding projects.

Opening is within Advanced Technology Development Department of the Technology and Manufacturing Group. Responsibilities include SRAM bitcell design, process integration, SWR / DOE (experiments) definition and generation, test structure definition, characterization, data analysis, design rule generation, process control document generation, device characterization, device simulation, driving SRAM yield and qualification.

Why TI?

Engineer your future. We empower our employees to truly own their career and development. Come collaborate with some of the smartest people in the world to shape the future of electronics.

We're different by design. Diverse backgrounds and perspectives are what push innovation forward and what make TI stronger. We value each and every voice, and look forward to hearing yours. Meet the people of TI ()

Benefits that benefit you. We offer competitive pay and benefits designed to help you and your family live your best life. Your well-being is important to us.

About Texas Instruments

Texas Instruments Incorporated (Nasdaq : TXN) is a global semiconductor company that designs, manufactures and sells analog and embedded processing chips for markets such as industrial, automotive, personal electronics, communications equipment and enterprise systems. At our core, we have a passion to create a better world by making electronics more affordable through semiconductors. This passion is alive today as each generation of innovation builds upon the last to make our technology more reliable, more affordable and lower power, making it possible for semiconductors to go into electronics everywhere. Learn more at TI.com .

Texas Instruments is an equal opportunity employer and supports a diverse, inclusive work environment. All qualified applicants will receive consideration for employment without regard to race, color, religion, creed, disability, genetic information, national origin, gender, gender identity and expression, age, sexual orientation, marital status, veteran status, or any other characteristic protected by federal, state, or local laws.

If you are interested in this position, please apply to this requisition.

Minimum Requirements :

Master of Science degree in Electrical Engineering or related degree

10 + years of relevant experience with solid understanding of CMOS and memory process flows and device integration, SRAM operation, and reliability

Demonstratable experience and ability to simulate SRAM bitcells (process, electrical, and circuit levels) for transistor design, bitcell functionality and margin

Preferred Qualifications :

Knowledge of memory device physics, including non-volatile memory devices

Circuit design engineering background

Knowledge of Spectre simulation and Cadence design / layout tools

Knowledge and user of data analysis tools including JMP, Spotfire, Dataware, etc. as well as parsing code languages such as PERL, and Python

Ability to organize tasks and manage schedules while working simultaneously with multiple organizations and multiple management chains. Hands-on person willing to take ownership

Working knowledge of yield and data analysis

Good communication and documentation skills

Ability to drive for success and thrive in a fast-paced development environment with multiple shifting priorities

ECL / GTC Required : Yes