MTS DRAM High Speed Interface Design Architect, HBM Job at Micron Technology in

Our vision is to transform how the world uses information to enrich life for all.

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

As a Member of Technical Staff HBM Design Architect, you will be responsible for design and development of high-speed interface between DRAM and Base die in HBM cube! This includes designing the DRAM command and control logic, as well serializing and de-serializing scheme. You will collaborate with a highly creative and motivated development team applying brand-new memory technologies to build groundbreaking HBM products!

Responsibilities

• Responsible for the high-speed DRAM and Base die interface in HBM cube.
• Design the DRAM command and control logic, as well as serializing and de-serializing scheme at the interface.
• Conduct circuit simulations using standard industry simulators such as FINESIM, HSPICE and VERILOG
• Collaborate with data path design on floor planning and full chip testbench.
• Analyze timing / area / power in high-speed DRAM or mixed-signal design.
• Contribute to the development of new HBM product opportunities by assisting with the overall design, layout, and optimization of Memory, Logic, and Analog circuits.

Qualifications

Required Experience

Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.

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